Gallium Nitride (GaN) Substrates Market - Forecast(2021 - 2026)

 The global Gallium Nitride (GaN) substrate Market is estimated to surpass $5.18 billion mark by 2023 growing at an estimated CAGR of more than 8.95% during 2018 to 2023. The market is majorly driven by two important characteristics i.e. higher switching capacity and high-temperature tolerance. In addition, wide bandgap substrates are emerging as a suitable replacement for conventional substrates because of its capability to enable small devices with higher performance efficiency. The wide bandgap substrate not only improves the performance but also saves energy and cut down the losses.

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What is Gallium Nitride and Gallium  Nitride Substrates?

GaN is wide bandgap material or banding material which possesses remarkable advantages over other semiconductor material such as Silicon, Silicon Carbide, Aluminum, and others. The nitride devices such as light emitters, transistors, diodes are largely dependent on the hetero-epitaxial growth of GaN on foreign substrates such as Silicon, Silicon Carbide and Sapphire. A large part of GaN substrate market comprises of substrates and is moving towards adopting bulk GaN substrates.

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The basic design of bulk substrates is nearly similar to templates. The only difference is that GaN on GaN substrate have homo-substrate as the base whereas the templates have the GaN film over the foreign substrates. The GaN on Sapphire, GaN on SiC, GaN on Si holds the disadvantages of weaker performance because of certain factors such as structural defects to due to mismatch of lattice and thermal expansion coefficient and chemical incompatibility.

This report incorporates an in-depth assessment of GaN substrate market by size, type, products, end user industries and geography. The major types of GaN elements encompassed in the scope includes GaN on Sapphire, GaN on SiC, GaN on Si, and GaN on GaN

What are the major applications for Gallium Nitride Substrates?

The various end-users assessed include automotive, healthcare, general lighting, consumer electronics, military communication and optical storage and among others. LED, Laser and power electronic devices, and radiofrequency are the major end-users of GaN substrate and holds a tremendous opportunity in future. From 2014 onwards, more than 120 Million of GaN LED were sold every year. This number was majorly driven by the lighting segment and is expected to dominate the market from short to long term. The GaN devices such as lasers are employed in healthcare industry for surgeries and treatments. The different types of treatment associated with healthcare are skin, dental, eye, cosmetic among others are performed with the help of lasers. In the automotive industry, GaN LED’s are employed into headlamps, welding systems, electric vehicle motor drive, and braking system. In addition, from near to medium term, adaptive lighting in automotive will witness significant traction because of its multiple functionality such as safety and creative interior lighting.

Market Research and Market Trends of Gallium Nitride Substrate Ecosystem

• Advancements in wafer production processes is the biggest opportunity that the major players in the industry are looking for to reduce the cost of GaN based electronics. SILTECTRA GmbH, has recently developed a laser based technology named as the “Cold Split” for reducing the wafer thickness to 100 microns within a very short duration and zero material wastage. This is expected to drive the adoption of GaN substrates. In addition, R&D related to cost reduction will thereby increase the flamboyancy in the market ecosystem towards achievement of low cost GaN devices.
  
• Large scale manufacturing capability for micro LEDs by employing GaN on Silicon is developed by Plessey Semiconductors and is set to avail prominent potential in AR/VR headsets, smart glassed, HUDs and so on. The significant increase in demand for high definition small displays across consumer electronics, automotive and industrial sector is poised to be assisted by the availability of such advanced process of manufacturing monolithic micro LED displays
  
• The recent acquisition of Infineon’s RF Power division by CREE, Inc. to strengthen its position in power electronics and to target 4G and the upcoming 5G markets. The telecommunication market is estimated to increase the deployment of the RF devices in upcoming years
  
• IQE plc, an epiwafer foundry and substrate manufacturer has set in motion the acquisition plan of Rare Earth Oxide (cREO) technology and IP portfolio from Translucent Inc., for $5m. cREO technology features an advanced approach for manufacturing a wide spectrum of semiconductor compound on silicon products including GaN-on-Si for power switching and RF electronics. 
  
• Recently, researchers from MIT developed a switch that can handle high voltage up to 1,200V using vertical FinFET GaN transistor design. This design can escalate the voltage handling capacity or breakdown voltage from 3,000 to 5,000V. With this the potential opportunities in markets such as smart grids, advanced energy storage and electric vehicle charging, Low cost LIDAR sensing, wireless charging (Battery Charging Pad) applications can be uncovered with promising outcomes
  
• Researchers have developed advanced gallium nitride (GaN)-on-silicon transistor technology optimizing the composition of the semiconductor layers with a high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.